Atomic Layer Deposition of Ultra-Thin Crystalline Electron Channels for Heterointerface Polarization at Two-Dimensional Metal-Semiconductor Heterojunctions

Atomic layer deposition (ALD) has emerged as a promising technology for the development of next generation low-power semiconductor electronics. The wafer-scaled growth two-dimensional (2D) crystalline nanostructures is fundamental step toward advanced nanofabrication technologies. Ga2O3 an ultra-wide bandgap metal oxide application in electronic devices. polymorphous with its unique characteristics and doping capabilities functional option heterointerface engineering at metal-semiconductor 2D heterojunctions technology. Plasma-enhanced atomic (PE-ALD) enabled ultra-thin low-growth temperatures. present study used PE-ALD process atomically thin ß-Ga2O3 films heterojunctions. Via control plasma gas composition ALD temperature, ~5.0 nm thick Au/Ga2O3-TiO2 heterointerfaces was achieved. Material characterization techniques showed effects temperature on properties structure films. following confirmed tunability this metal/semiconductor polarized junction, which works electron channel developed based tunable p-n junctions interfaces.